Abstract
A bottom up method for the fabrication of a roughened transparent conductive layer (TCL) to accomplish a prominent enhancement in light extraction from GaN-based blue light emitting diodes (LEDs) has been developed. The nanostructured transparent conductive oxide (TCO) film was obtained by thermal oxidation of InN nanocones (NCs) grown beforehand into In2O3 NCs in a tube furnace at 550 °C, beyond the dissociation temperature of InN. A two-fold increase in the light output power of the LED with the In2O3 NCs TCL was achieved compared to that of an LED using a conventional Ni/Au TCL. Our work proposes a simple, useful and low thermal budget route to form a roughened In2O3 NCs film used as the TCL to realize a prominent enhancement in light extraction from LEDs. Based on the capability of the low temperature fabrication process of roughened In2O3 TCLs, our proposed method is suitable for industrial mass manufacture.
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