Abstract
The single crystals of neodymium doped lanthanum scandium borate were grown for the microchip laser fabrication. The space group of grown crystal was found to be C2/c and the crystal lattice parameters were a=7.7 A, b=9.8 A, c=12.0 A, and β=105.4°. The optical properties, fluorescent lifetime, refractive indices, absorption and emission spectra with neodymium doping concentration, were investigated and compared to the other neodymium doped single crystals for the laser application. The fundamental lasing experiment with 808 nm, the wavelength that easy to access with the commercial diode laser, was done with Ti:sapphire laser to observe its potential for the efficient microchip laser. And we showed that the direct pumping to the level of 4 F 3/2 make an improvement in slope efficiency and threshold when it is compared to the result of conventional pumping to the level of 4 F 5/2 absorption band. The direct pumping comtribute to the reduction of dissipative heat generation in microchip laser crystal, because its quantum efficiency is higher than that of the conventional pumping to the level of 4 F 5/2 .
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