Abstract
The effects of high-pressure annealing on interface properties and charge trapping of nMOSFET with high-/spl kappa/ dielectric were investigated. Comparing with conventional forming gas (H/sub 2//Ar=4%/96%) annealed sample, nMOSFET sample annealed in high-pressure (5-20 atm), pure H/sub 2/ ambient at 400/spl deg/C shows 10%-15% improvements in linear drain current (I/sub d/) and maximum transconductance (g/sub m,max/). Interface trap density and charge trapping properties were characterized with charge pumping measurements and single pulsed I/sub d/-V/sub g/ measurements where reduced interface state density and improved charge trapping characteristics were observed after high pressure annealing. These results indicate that high pressure pure hydrogen annealing can be a crucial process for future high-/spl kappa/ gate dielectric applications.
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