Abstract
Aluminum-doped zinc oxide (AZO) films were prepared on glass substrates using radio frequency (RF) magnetron sputtering technique. The sputtering pressure was varied between 10 and 80 mTorr for films with a deposition time of 30 min and between 40 and 80 mTorr for films with a deposition time of 180 min. Effects of the sputtering pressure on optical properties, crystal structure, electrical properties, microstructure and infrared reflection of the AZO films were systematically investigated by UV–VIS–NIR spectrophotometry, XRD, Hall measurement, AFM and FTIR, respectively. The prepared AZO film at PAr = 80 mTorr with 180 min deposition time exhibits the lowest electrical resistivity, highest mobility and carrier concentration as well as high average visible transmission in 400–760 nm wavelength range about 82.9%. The average infrared reflection of 63.1% in 8–14 μm waveband makes the film a superior candidate for low-emissivity applications.
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