Abstract
This investigation proposes the improved double δ-doped InGaP/InGaAs heterostructure field-effect transistor (HFET) grown by metalorganic chemical vapour deposition. The extrinsic transconductance (gm) and saturation current density (Imax) of the double δ-doped InGaP/InGaAs HFET are superior to those of the previously reported single δ-doped InGaP/InGaAs HFETs. The first n-InAlGaP/GaAs HFET is also investigated because it has a high Schottky barrier, a large high band gap and a large conduction-band discontinuity (ΔEC). Even without indium in the channel of the InAlGaP/GaAs HFET, gm and Imax are as high as 170 mS mm−1 and 410 mA mm−1, respectively. The gm values of these two HFETs remain large even when the gate voltages are positive. Moreover, the breakdown voltages of the two examined HFETs both exceed 40 V.
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