Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

Abstract

Multiple-stripe planar buried heterostructure (MS-PBH) was newly developed to improve the high-temperature and high-power characteristics of spot-size converter integrated all-selective metalorganic vapor phase epitaxy (MOVPE) grown planar buried heterostructure laser diodes (SSC-ASM-PBH LDs). Recombination-layer stripes were simultaneously grown with the active layer and thickness-tapered waveguide by narrow-stripe selective MOVPE, and inserted in the current-blocking layers. The effect of recombination-layer-stripe insertion was investigated both theoretically and experimentally. The leakage current suppressed by the inserted recombination-layer stripes resulted in improved high-temperature and high-power characteristics. A maximum output power of 47 mW at 85°C, a high characteristics temperature T0 value of 69 K (25°C–85°C), and a small slope-efficiency degradation of 1.1 dB (25°C–85°C) were obtained while maintaining excellent coupling characteristics to a flat-ended single-mode fiber due to its narrow beam divergence.