Abstract
We investigated the ground-state (GS) modulation characteristics of 1.3 μm InAs/GaAs quantum dot (QD) lasers that consist of either as-grown or annealed QDs. The choice of annealing conditions was determined from our recently reported results. With reference to the as-grown QD lasers, one obtains approximately 18% improvement in the modulation bandwidth from the annealed QD lasers. In addition, the modulation efficiency of the annealed QD lasers improves by approximately 45% as compared to the as-grown ones. The observed improvements are due to (1) the removal of defects which act as nonradiative recombination centers in the QD structure and (2) the reduction in the Auger-related recombination processes upon annealing.
Highlights
Quantum dots (QDs) are promising for realizing fast and stable laser sources in fiber optic applications, due to their superior characteristics over conventional quantum well (QW) lasers, such as low threshold current, high internal efficiency, and infinite characteristic temperature [1,2]
We have investigated the effect of rapid thermal annealing (RTA) on the GS modulation characteristics of 1.3 μm p-doped InAs/GaAs QD lasers
Due to ptype modulation doping in the QDs, the electrostatic attraction of the excess holes increases the effective barrier for electron escape, limits the electron thermalization till higher temperature as compared to the intrinsic device and results in a larger T0 [18]
Summary
Quantum dots (QDs) are promising for realizing fast and stable laser sources in fiber optic applications, due to their superior characteristics over conventional quantum well (QW) lasers, such as low threshold current, high internal efficiency, and infinite characteristic temperature [1,2]. This may lead to faster inter-level relaxation of the carriers [7], and suppression of ES lasing and improved high-speed modulation efficiency.
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