Improved Geometric Control of the High-Field Linear Magnetoresistance by Metallic Bridges in InSb Arrays

Abstract

Geometric manipulation of the magnetoresistance of InSb remains topical. Here we aim to investigate the magnetoresistance properties of disc arrays contacted by gold bridges. In order for the gold bridges to significantly alter the magnetoresistance properties issues such as side wall contacting and low metal to semiconductor contact resistance have to be addressed. We demonstrate in this work that array structures with gold bridges have modest impact on the high‐field response of InSb compared to unprocessed wafer material.