Abstract
Transparent conductive coating (TCO) used as front contact layer in MoO x /n-Si heterojunction solar cells should feature excellent electrical properties, low optical absorption and high work function simultaneously. In this study, tin-doped indium oxide (ITO), titanium-doped indium oxide (ITiO) and zinc-doped indium oxide (IZO) deposited as front contact layer at room temperature by sputtering were evaluated. The open-circuit voltage is hardly affected by the work function of TCO film. The IZO front contact with Wf=5.22 eV enables to highest V oc of 606 mV. Meanwhile, high mobility and transmittance also boost the short-circuit current density to 33.04 mA/cm2. A cell efficiency of 12.2% has been achieved by applying IZO front contact and has high potential to obtain better electrical properties by introducing back surface field structure.
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