Abstract
The application of an aluminum (Al) capping layer on top of an In–Ga–Zn–O (IGZO) active layer is proposed to enhance the mobility of IGZO thin-film transistors (TFTs). The Al metal layer forms a very thin and dense oxide film on the surface that prevents further internal oxidation, and an additional AlO x interlayer between Al and IGZO is formed using oxygen in the IGZO back-channel region due to its strong oxidation power. The formation of an aluminum oxide interlayer induces an oxygen-deficient region in the active layer, inducing free carriers that enhance the field-effect mobility from 11.3 to 72.6 cm2/Vs. The device reliability under positive and negative bias stress in the dark is relatively unaffected by the presence of the Al capping layer; however, the stability under negative bias illumination stress is accelerated, likely originating from the ionization of oxygen vacant sites.
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