Abstract
In this letter, the AlGaInP light-emitting diodes (LEDs) between the air and GaP layer are added to the textured ZnO:Al (AZO) films in order to improve light extraction of the device. At 20 mA, the relative luminous intensity of textured AZO LEDs is increased by 129.9% when compared with the conventional sample. Furthermore, the far-field radiation pattern was improved with intensity not only at 0 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> , but also from 60° to 300° . Due to loss of internal Fresnel efficiency and critical angle efficiency, textured AZO LEDs are significantly improved by the wet-etching technique. The surface treatment of AZO films generates surface texturing that is characterized as random crater. It presents a better far-field radiation pattern when compared with nontextured AZO films. This letter has demonstrated the far-field radiation pattern and the theory for enhancing light emission efficiency of LEDs.
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