Abstract

A report is presented on AlSi(1%), AlSi(1%)Ti(0.1%), and AlSi(1%)Cu(0.5%) alloy planarization results using a XeCl excimer laser. The authors find that excellent planarization is achieved when filling submicron contact hole structures. However, for the AlSi alloy, spot ablation occurs which is characterized by the removal of metal. This is not the case for the AlSiCu and the AlSiTi alloys. The best morphology is obtained for the AlSiTi alloy with large areas completely free of ablation and pitting. These results indicate that reliable planarization over large device areas can be achieved using the AlSiTi alloy. >

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