Abstract
Improved Endurance of Ferroelectric HfxZr1-xO2 Integrated on InAs The benefits of using a milliseconds flash lamp annealer to crystallize HfxZr1-xO2 into the ferroelectric orthorhombic crystal phase are highlighted in article number 2201038 by Robin Athle, Mattias Borg, and co-workers. By annealing 1000x faster than traditional rapid thermal processing, integration of ferroelectric HfxZr1-xO2 on thermally sensitive substrates such as III-V semiconductors can be achieved. This approach allows for exceptional material integration in emerging memory and neuromorphic applications.
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