Abstract
We investigated a high-quality novel AlInSb buffer layer to increase the electron mobility of an InSb quantum well (QW) structure, which was grown on a (100) GaAs substrate by molecular beam epitaxy. We achieved high electron mobility in the InSb QW structure using an Al0.25In0.75Sb/Al0.15In0.85Sb stepped buffer layer and realized reduced compressive strain and improved surface roughness. In addition, we investigated the dependence of the Al0.25In0.75Sb layer thickness in the Al0.25In0.75Sb/Al0.15In0.85Sb stepped buffer layer on the electron mobility characteristics. We only obtained increased electron mobility using the Al0.25In0.75Sb layer within a critical thickness range.
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