Abstract
Platinum is a promising candidate for the realization of blocking electrical contacts on cadmium-zinc-telluride (CdZnTe or CZT) radiation detectors. However, the poor mechanical adhesion of this metal often shortens the lifetime of the final device. In this work, a simple and effective procedure to obtain robust platinum contacts by electroless deposition is presented. Microscopical analysis revealed the final thickness and composition of the contact layer and its adhesion to the bulk crystal. The blocking nature of the Pt-CdZnTe junction, essential to obtain low noise devices, was confirmed by current–voltage measurements. The planar Pt-CdZnTe-Pt detectors showed good room temperature spectroscopic performance with energy resolution of 4% (2.4 keV) and 3% (3.7 keV) FWHM at 59.5 and 122.1 keV, respectively. Finally, we showed, for the first time, that platinum contacts allow the estimation of the carrier lifetime and mobility of both holes and electrons by using current transient measurements. This demonstrated the optimal hole extraction capability of such contacts.
Highlights
Platinum is a promising candidate for the realization of blocking electrical contacts on cadmium-zinctelluride (CdZnTe or CZT) radiation detectors
Carrier mobility and lifetime measurements were obtained by means of Laser Induced Transient Current Technique (LI-TCT)[12] on an additional set of samples based on CZT from REDLEN and from IMEM-CNR, on which Pt contacts were deposited on the opposite surfaces
We realized Pt Schottky contacts deposited on CdZnTe with a novel procedure based on the electroless technique
Summary
Platinum is a promising candidate for the realization of blocking electrical contacts on cadmium-zinctelluride (CdZnTe or CZT) radiation detectors. This study is focused on explaining the role of the metal/semiconductor junction on the charge collection efficiency for both electrons and holes and, on the detector final performance.
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