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Abstract
The interface properties of the anodic oxide/n-type (111) InP metal oxide semiconductor (MOS) structures significantly improved while using the polishing agent HBr:K2Cr2O7:H2O (BCA). Annealing at 250°C dehydrates the grown oxides and has a strong effect on the surface potential. Composition of the oxides analyzed using x-ray photoelectron spectroscopy showed that the oxides are composed of In2O3, InPO3, and InPO4. MOS structures fabricated on BCA polished substrates show a lower surface state density of 6 × 1010 cm−2 eV−1 when compared to the substrates polished with bromine-methanol (8 × 1010 cm−2 eV−1).
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