Improved electrical properties of bottom-gate mizo thin film transistors using oxygen and argon plasma treatment

Chunfeng Hu ,Xin-Ping Qu,Yanping Deng ,Jianbo Feng

doi:10.1109/icsict.2014.7021271

Improved electrical properties of bottom-gate mizo thin film transistors using oxygen and argon plasma treatment

Chunfeng Hu , Xin-Ping Qu + Show 2 more

https://doi.org/10.1109/icsict.2014.7021271

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Publication Date: Oct 1, 2014

Citations: 1

Affiliation: Fudan University

#Argon Plasma #Thin Film Transistors + Show 8 more

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Abstract

Both oxygen (O 2 ) and argon (Ar) plasma treatments are carried out on the bottom-gate structured Mg-doped InZnO (MIZO) thin film transistors (TFTs) prepared by sol-gel method. It is found that the electrical properties of MIZO TFTS are greatly improved with the higher field effect mobility (μ FE ) and two orders of magnitude higher on/off current ratio under both kinds of plasma treatment.

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