Abstract
We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a promising electrical characteristics as a channel material for field-effect transistors (FETs) because of its high mobility, good on/off ratio and low temperature processability. In order to apply these 2D materials to large-scale and flexible electronics, it is essential to develop processes that are compatible with current electronic device manufacturing technology which should be conducted at low temperatures. Here, we deposited a crystalline SnS2 at 150 °C using ALD, and we then annealed at 300 °C. X-ray diffraction (XRD) and Raman spectroscopy measurements before and after the annealing showed that SnS2 had a hexagonal (001) peak at 14.9° and A1g mode at 313 cm−1. The annealed SnS2 exhibited clearly a layered structure confirmed by the high resolution transmission electron microscope (HRTEM) images. Back-gate FETs with SnS2 channel sandwiched by top and bottom ZrO2 on p++Si/SiO2 substrate were suggested to improve electrical characteristics. We used a bottom ZrO2 layer to increase adhesion between the channel and the substrate and a top ZrO2 layer to improve contact property, passivate surface, and protect from process-induced damages to the channel. ZTZ (ZrO2/SnS2/ZrO2) FETs showed improved electrical characteristics with an on/off ratio of from 0.39×103 to 6.39×103 and a mobility of from 0.0076 cm2/Vs to 0.06 cm2/Vs.
Highlights
Two dimensional (2D) materials have attracted considerable interest since the discovery of graphene.[1]
Because of their high charge carrier mobility and high on-off current ratio, layered metal dichalcogenides (LMDs) can be applied in many different areas, including as transistors, sensors, photovoltaic devices, photo detectors and other electronic devices.[6]
It has been reported that ultrathin SnS2 transistors fabricated with mechanically exfoliated flakes have superior electrical properties such as a high carrier mobility of ∼ 230 cm2/Vs and an on/off current ratio of > 106.7 The main objective of this study is to apply this LMDs to large scale integrations and flexible electronics at low temperatures.[14]
Summary
Two dimensional (2D) materials have attracted considerable interest since the discovery of graphene.[1] These graphene has unique characteristics that are distinct from bulk materials, such as high transmittance, high carrier mobility, flexibility, and a large specific surface area.[2,3,4] unfunctionalized graphene has a zero bandgap, resulting in poor transistor performance.[5,6] Due to the absence of band gap of graphene, layered metal dichalcogenides (LMDs) have been investigated as channel materials for FETs. LMDs are MX2 compounds consisting of a metal (M = Mo, W, Nb, Ni) and a chalcogen (X = S, Se, Te).[7] Because of their high charge carrier mobility and high on-off current ratio, LMDs can be applied in many different areas, including as transistors, sensors, photovoltaic devices, photo detectors and other electronic devices.[6] These materials have mainly been prepared
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