Abstract
Ni-metal-induced crystallization (MIC) of amorphous Si (α-Si) has been employed to fabricate low-temperature polycrystalline silicon thin-film transistors (TFTs). However, the Ni residues degrade the device performance. In this study, a new method for manufacturing MIC–TFTs using drive-in Ni-induced crystallization with a chemical oxide layer (DICC) is proposed. Compared with that of MIC–TFTs, the on/off current ratio (I on/I off) of DICC–TFTs was increased by a factor of 9.7 from 9.21 × 104 to 8.94 × 105. The leakage current (I off) of DICC–TFTs was 4.06 pA/μm, which was much lower than that of the MIC–TFTs (19.20 pA/μm). DICC–TFTs also possess high immunity against hot-carrier stress and thereby exhibit good reliability.
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