Abstract
Although SiGe super-lattice (SL) buried channel was proposed to enhance carrier mobility in MOSFETs, its application on FinFETs is not reported yet. The electrical characteristics of nFinFETs with SiGe and SiGe SL-like buried channels were studied in this letter for the first time. The results show that the electron mobility of nFinFETs with SiGe buried channel is enhanced by an SL-like structure. A higher ON-state current and ON-state/ OFF-state current ratio are also achieved. However, the sub-threshold swing and reliability characteristics need improvement due to slight degradation of interface quality.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
