Abstract
ABSTRACTWe have deposited n-i-p diodes with microcrystalline intrinsic layers for radiation detection applications. The diodes show interesting electrical characteristics which have not been reported before. From TOF Measurement for our best samples we obtained μe values which are about 3 times larger than our standard a-Si:H. for μτ values approximately a factor of 2 improvement was observed. The N*D values derived from hole-onset measurements show lower ionized dangling bond density than normal a-Si:H Material. We have proposed a simple model which can very well explain the experimental results.
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