Abstract
A Ge p-MOSFET with an ultralow equivalent oxide thickness (EOT) of ∼0.47 nm and a high hole mobility of ∼401 cm2/V-s is demonstrated in this work. The excellent electrical characteristics are obtained by in-situ H 2 and NH 3 plasma treatments on the Ge/High-K interface. The enhanced drive current can be attributed to the lower EOT or higher mobility. Device with a Hf cap layer demonstrates the lowest interface trap density and stress-induced leakage current. Moreover, device with Zr cap layer has the lowest hysteresis effects and stress-induced voltage shifts.
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