Abstract
We report green light emitting diodes (LEDs) with Au nanoclusters in a micro-hole patterned p-GaN layer (ANCs-MHPP) to improve the light emission efficiency. Low-temperature photoluminescence (PL) and time-resolved PL showed that green LEDs with ANCs-MHPP demonstrated higher internal quantum efficiencies and faster decay times compared to conventional green LEDs. In addition, the opto-electronic performance of green LEDs with ANCs-MHPP was remarkable. These results can be attributed to the exciton–surface plasmon coupling between excitons in multi-quantum wells and surface plasmons of Au nanoclusters and the surface texturing effect caused by the geometrical shape of the micro-hole patterned p-GaN layer.
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