Abstract
Ferroelectric Pb(Zr, Ti)O3 (PZT) thin films and PbS quantum dots (QDs) hybrid device are made for photovoltaic application, using a solution based fabrication process. The wide band gap of ferroelectric PZT can enable a high open circuit voltage. The colloidal PbS quantum dot provides a tailored absorption spectrum and an excellent light harvesting property, resulting in increased short circuit current. We present a hybrid photovoltaic device based on PZT thin film with a PbS quantum dot layer. With a combination of PZT and PbS QDs, the short circuit current has increased by 8000 times, while maximizing the open circuit voltage. The overall power conversion efficiency was 0.75% and this is more than 50 times higher than a PZT film only photovoltaic device.
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