Abstract
Significantly improved dielectric properties of CaCu3Ti4O12 ceramics were accomplished by co-doping with Y3+ and Mg2+ to simultaneously control the geometric and intrinsic properties of grain boundaries (GB), respectively. Substitution of these dopants strongly suppressed grain growth while enhancing the resistivity of an individual GB, respectively. The resulting small grained microstructure with very high GB density and greatly increased resistivity resulted in a strong increase in the total resistance of GBs. This caused a large decrease in the loss tangent (tanδ~0.013). Furthermore, nonlinear current–voltage properties were also improved.
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