Abstract
Abstract The good dielectric and non-ohmic properties of CaCu3Ti4O12 and CaCu2.95Zn0.05Ti4-xZrxO12 (x = 0, 0.05 and 0.10) thin films prepared by a sol-gel method were determined. The enhanced dielectric properties, with a dielectric constant of e ' ≈ 4357 and a dielectric loss of tan δ ≈ 0.019, of the CaCu2.95Zn0.05Ti3.95Zr0.05O12 (ZnZr05) thin film at 1 kHz and room temperature were investigated. The XPS spectrum showed that the ZnZr05 film can produce copper vacancies VCu” and mixed valence structures for Cu+/Cu2+ and Ti3+/Ti4+ inside the crystal. The ZnZr05 film maintained a high dielectric constant due to the large grain sizes and the presence of the mixed valence structures, while its low tan δ was attributed to an increase in the VCu” concentration. At the same time, the enhanced nonlinear coefficient (4.2) and low leakage current (193 μA) of the ZnZr05 film were explained in detail.
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