Abstract
ABSTRACTThe DC and RF characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs MOS p-HEMTs with different gate oxide thickness were investigated and compared with those of Schottky-gate p-HEMT without the gate oxide layer. The oxide layer was implemented by using a liquid phase oxidation technique. It was found that transconductance (gm), threshold voltage and breakdown voltage characteristics of MOS p-HEMTs depended strongly on the gate oxide thickness. The MOS p-HEMTs showed superior DC and RF performances compared with those of GaAs-based MOSFET having oxide/n-GaAs or oxide/InGaAs interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
