Abstract
Herein, an unprecedented report is presented on the incorporation of size-dependent gold nanoparticles (AuNPs) with polyvinylpyrrolidone (PVP) capping into a conventional hole transport layer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The hole transport layer blocks ion-diffusion/migration in methylammonium-lead-bromide (MAPbBr3)-based perovskite light-emitting diodes (PeLEDs) as a modified interlayer. The PVP-capped 90 nm AuNP device exhibited a seven-fold increase in efficiency (1.5%) as compared to the device without AuNPs (0.22%), where the device lifetime was also improved by 17-fold. This advancement is ascribed to the far-field scattering of AuNPs, modified work function and carrier trapping/detrapping. The improvement in device lifetime is attributed to PVP-capping of AuNPs which prevents indium diffusion into the perovskite layer and surface ion migration into PEDOT:PSS through the formation of induced electric dipole. The results also indicate that using large AuNPs (> 90 nm) reduces exciton recombination because of the trapping of excess charge carriers due to the large surface area.
Highlights
An unprecedented report is presented on the incorporation of size-dependent gold nanoparticles (AuNPs) with polyvinylpyrrolidone (PVP) capping into a conventional hole transport layer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)
Atomic force microscopy (AFM) images showed that the surface roughness of the PEDOT:PSS was increased by increasing the size of the AuNPs (Supplementary Fig. S2)
We demonstrated the dynamics of perovskite light-emitting diodes (PeLEDs) containing modified PEDOT:PSS layers with different sizes of AuNPs (10 50, 90, and 100 nm)
Summary
An unprecedented report is presented on the incorporation of size-dependent gold nanoparticles (AuNPs) with polyvinylpyrrolidone (PVP) capping into a conventional hole transport layer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The improvement in device lifetime is attributed to PVP-capping of AuNPs which prevents indium diffusion into the perovskite layer and surface ion migration into PEDOT:PSS through the formation of induced electric dipole. One of the main reasons for the low PeLED device efficiency is the presence of a high energy barrier between the work function (WF) of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (5.0 eV), which is a well-known hole transport layer (HTL), and the valence band of the OIHP material (5.9 eV). PVP-capped gold nanoparticles (AuNPs) of different sizes were introduced into the conventional HTL (PEDOT:PSS), and a PeLED based on a methyl-ammonium-lead-bromide (MAPbBr3) perovskite layer was constructed. To the best of our knowledge, this is the first report on the incorporation of size-controlled AuNPs with PVP capping as a modified interlayer in PeLED devices
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