Abstract
Zinc-doped Copper oxide (Zn:CuO) thin films are deposited via well-designed automated jet nebulizer spray pyrolysis (JNSP) system for developing Ag/Zn:CuO/n-Si structured diode. The system is fitted with a microcontroller-based spray nozzle with an up/down movement to enable thin film deposition in an automated way. Zn:CuO thin films are deposited via an automated JNSP system with 1%, 3%, and 5% doping concentration. The characteristics studies and analysis of Zn:CuO thin films are studied. XRD examination showed that all of the Zn:CuO thin films have a monoclinic crystal structure. Surface morphological analysis of an automated Zn:CuO thin films showed spherical-shaped small grains. It is found that particles are closely packed and well covered. Additionally, elementary composition analysis (EDS) is carried through to finalize the ‘Cu’, ‘O’, and ‘Zn’ atoms in the deposited Zn:CuO materials. The least energy band gap of 1.90 eV and the highest conductivity of 3.67 x 10-8 S/cm is obtained for 3% Zn doped CuO. Based on the characteristics analysis and studies of automated Zn:CuO thin films, Ag/Zn:CuO/Si structured diode have been developed. Various diode parameters have been evaluated under light and dark conditions.
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