Abstract
An improved model in defining the dead time (t D ) response for Silicon Avalanche Photodiode (Si APD) is presented in this paper. The generation of a mathematical model for Si APD is used to characterize the performance of passively quenched Si APD. For this purpose, quenching time (tq) and recharging time (tr) models are implemented to obtain t D less than 50 ns. Therefore, the value of quenching resistor (R L ) should be minimized to reduce the recharge duration of time constant R L C. By concerning various values of R L and the influence of parasitic capacitance (C), tr and tq are analyzed in defining t D for Si APD, which is working in Geiger's mode.
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