Abstract
Using AlN submounts with metal patterns made by a photolithographic process, the two-section quantum-dot superluminescent diodes were mounted epi-down on the heatsinks. It is demonstrated that the epi-down mounting process can offer improved heat dissipation and optical performance in the two-section devices. Under continuous-wave operation without temperature control, by properly controlling the pump levels in the two sections, a broad flat-top-like emission spectrum of 112 nm with a high output power of 107 mW is obtained from a two-section quantum-dot superluminescent diode with an epi-down mounting structure.
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