Abstract
This work demonstrates the improved characteristics of an ultrathin dielectric by using the plasma treatment with additional rapid thermal annealing. The after the treatment exhibits superior characteristics such as a small effective oxide thickness (∼2.25 nm), a low leakage current a high breakdown electric field (−24 MV/cm), a long projected 10 yr lifetime (−12 MV/cm), a small capacitance-voltage hysteresis (25 mV), and a high barrier height for Frenkel-Poole emission (0.55 eV). These good properties are attributed to the nitrogen incorporation into the dielectric to eliminate the traps after annealing. The postnitridation annealing appears to be a very useful treatment for future ultrathin metal-oxide gate dielectrics. © 2004 The Electrochemical Society. All rights reserved.
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