Abstract
A metamorphic high electron mobility transistor with symmetric graded InxGa1−xAs channel has been successfully grown by molecular beam epitaxy system. Due to the lower interface roughness scattering, the improved electron mobility as high as 9500(30600)cm2∕Vs at 300(77)K is achieved. By using the self-consistent method, three subbands in the graded channel are found, which is matched to the Shubnikov-de Haas data. By using the graded channel, In0.425Al0.575As Schottky layer, and undoped InP setback layer, a high gate breakdown voltage of 24V is obtained. Meanwhile, the measured current gain cutoff frequency fT and maximum oscillation frequency fmax for a 1.5μm gate device are 18.9 and 48.4GHz, respectively.
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