Abstract
ABSTRACTCdTe solar cells with a Te-buffer layer adjacent to the back contact were fabricated. The effects of the Te layer on cell performance were evaluated in detail. The carrier density of the Te layer (1018 cm-3) was measured. The valence band offset of the CdTe/Te interface (∼0.3-0.5 eV) was determined from current-voltage-temperature measurements and published reports. These values were incorporated into a simulation model and compared to the measured experimental performance with good agreement. Most notably, it was found that the Te layer allowed improved cell performance with less Cu required to form the back contact.
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