Abstract
AbstractImprovements in GaN capping layer growth towards increased stability of InGaN quantum dots (QDs) will be presented. Surface quality is enhanced with changing the carrier gas during GaN capping layer growth from nitrogen to hydrogen. Without a dissolution of QDs it is possible to increase the temperature to 1050 °C applying a temperature ramp during growth of GaN.Dot stacks with an uniform and up to room temperature bright photoluminescence emission spectra is reported qualifying the structure to be incorporated into LED and laser structures. Finally, the evolution of the nucleation layer into flat and broad island‐like structures will be explained by the spinodal decomposition model (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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