Abstract
Resonant tunneling diode (RTD) pair oscillators were fabricated on an AlN ceramic substrate employing a novel integration process based on an assembly of small device blocks. By using this process, chip capacitors were mounted close to the oscillator without large parasitic inductance. This can relax the severe condition for bias stability. Stable oscillations were observed in the fabricated circuits at 35–50 GHz. A good single sideband phase noise of -100 dBc/Hz at a 100 kHz offset frequency was also observed for the fabricated circuit.
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