Abstract
In this study, Au/p-GO/n-lnP/Au–Ge device structure for possible micro- and opto-electronic applications has been investigated. Firstly, the graphene oxide (GO) interlayer has been characterized before device fabrication. The GO interlayer has band gap energy of 2.4 eV and large contact area. In the Raman spectrum, ID/IG ratio was determined as 0.78. According to the Thermionic, Norde and Cheung methods, ideality factor, Schottky barrier height, series resistance and distribution of interface states have been investigated for the devices. The presence of GO interlayer has caused to both the barrier height increased from 0.44 to 0.71 eV and the significant increase in rectification ratio from 102 to 105 at ±1 V. Additionally, the ideality factor has improved from 1.32 to 1.23 at 300 K. The device working stability at high temperatures (400 K) has been observed in the Au/p-GO/n-lnP/Au–Ge device. Furthermore, the resistive switching effect of the GO interlayer has been observed as temperature-dependent metallic character of series resistance in high voltage region.
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