Abstract
The anti-reflective properties of amorphous silicon (a-Si) films deposited directly on Al nanoconcave arrays with various interpore distances (Dc) were studied. The Al anodized at 195V (Dc=456.7nm) and covered by a 277-nm a-Si layer demonstrated the best light- trapping efficiency. It absorbed up to ~86% of incident light. Average reflectivity under AM1.5 solar spectrum is strongly correlated to height alteration at the a-Si front surface. Further optimization found that Dc and film thickness of 450–500nm and 250–300nm, respectively, take full advantage of the excellent optical properties of this simple, low cost material suitable for large scale production.
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