Abstract
Intrinsic/doped stacked hydrogenated amorphous silicon (a-Si:H) are widely used passivation layers for amorphous/crystalline silicon (a-Si/c-Si) heterojunction solar cells. This work reports that hot wire chemical vapor deposition of doped a-Si:H can significantly modify the property of the underlying intrinsic a-Si:H (a-Si:H(i)) as well as a-Si/c-Si interface passivation, which stems from the in-diffusion of highly reactive atomic hydrogen. Fourier transform infrared spectroscopy, spectroscopic ellipsometry and Raman analyses indicate that the underlying a-Si:H(i) films become more compact and less defected as a result of network reconstruction during doped a-Si:H capping. After this reconstruction, underdense a-Si:H(i) films obtained superior passivation quality than widely used dense layers, despite the inferior quality in the initial state. Effective minority carrier lifetime of c-Si passivated by underdense a-Si:H(i) was 19.9 ms, much higher than 15.2 ms in the case of using dense a-Si:H(i). The porous structure of underdense a-Si:H(i) facilitates hydrogen diffusion towards a-Si/c-Si interface and hence a rapid reduction of interface defect densities occurs, accounting for the better passivation quality. SHJ solar cells (160 μm, 156 × 156 mm2) with industry-compatible process were fabricated, yielding the efficiency up to 23.0% with high Voc values of 741 mV.
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