Abstract
Double doped-channel AlGaAs/InGaAs field effect transistors (D-DCFETs) have been proposed, fabricated, and compared with conventional doped-channel FETs (DCFETs). This double doped-channel design provides a higher current density, and a linear operation range over a wider dynamic range. These advantages suggest that the double doped-channel design is more suitable for linear and high power microwave device applications.
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