Improved Ag–Si interface performance for Si solar cells using a novel Te-based glass and recrystallization process of Ag

Abstract

In order to prove that the Te-based glass frit could be applied to Ag pastes to fabricate Ag electrode and elucidate the reactions among Ag, the frit, and the Si wafer, the Te-based glass and Ag pastes with different contents of glass frit (0 wt%, 1 wt%, 3 wt%, 5 wt%, and 7 wt%) were prepared. The microstructures of Ag electrodes and the phase analysis of interface between Ag electrodes and the Si wafer were investigated using scanning electron microscopy (SEM) coupled with energy-dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). When the content of glass frit is 3 wt%, the Ag electrode has good adhesion with Si wafer. What’s more, Ag crystallites and metallic Te could be found on the Si wafer. These results suggest that the TeO2 in the glass frit could react with SiN x anti-reflecting coating (ARC) and Si to serve as a medium for forming Ag crystallites.