Abstract
In this study, Indium Tin Oxide thin film composite nano silver film was used to replace the positive silver gate-like electrodes commonly use by silicon solar cells. The study aimed to increasing the area of light absorption for silicon solar cells thereby enhance the solar cell optoelectronic conversion efficiency. The experiment adopted sol-gel solution containing phosphorus which was used as the source of phosphorus dopant. The solution was spin-coated on single crystal silicon, followed by high temperature annealing to form p-n junction. This substrate was coated with nano silver film of different thicknesses, while the coating of Indium Tin Oxide with thickness of 450nm was used as the front electrode, to increase solar cell efficiency. The study proposed an appropriate thickness of nano silver film which could effectively improve the diode properties of components and provide better efficiency for solar cells with such structure.
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