Abstract
The starting procedure of hydrogenated microcrystalline-silicon (µc-Si:H) film growth at a high rate has been controlled in a plasma-enhanced chemical vapor deposition process to improve the optoelectronic properties of the resulting n/i interface as well as the intrinsic bulk layer in µc-Si:H-based substrate-type (n–i–p) solar cells. The electron temperature, monitored using optical emission spectroscopy, in the plasma during film growth is successfully controlled by changing the starting procedure, i.e., gradual SiH4 introduction and slow power application, leading to the preparation of high-quality µc-Si:H films with a low dangling-bond defect density. Reduction of the defect density in the intrinsic layer and improvement of the optoelectronic properties at the n/i interface are demonstrated through the fabrication of single-junction n–i–p solar cells showing high photovoltaic performance.
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