Importance of frequency dependent magnetoresistance measurements in analysing the intrinsicality of magnetodielectric effect: A case study

Abstract

Magnetodielectric (MD) materials have attracted considerable attention due to their intriguing physics and potential future applications. However, the intrinsicality of the MD effect is always a major concern in such materials as the MD effect may arise also due to the MR (magnetoresistance) effect. In the present case study, we report an experimental approach to analyse and separate the intrinsic and MR dominated contributions of the MD phenomenon. For this purpose, polycrystalline samples of LaGa1-xAxO3 (A = Mn/Fe) have been prepared by solid state reaction method. The purity of their structural phase (orthorhombic) has been validated by refining the X-ray diffraction data. The RTMD (room temperature MD) response has been recorded over a frequency range of 20 Hz to 10 MHz. In order to analyse the intrinsicality of the MD effect, FDMR (frequency dependent MR) by means of IS (impedance spectroscopy) and dc MR measurements in four probe geometry have been carried out at RT. A significant RTMD effect has been observed in selected Mn/Fe doped LaGaO3 (LGO) compositions. The mechanism of MR free/intrinsic MD effect, observed in Mn/Fe doped LGO, has been understood speculatively in terms of modified cell volume associated with the reorientation/retransformation of spin-coupled Mn/Fe orbitals due to the application of magnetic field. The present analysis suggests that in order to justify the intrinsic/resistive origin of the MD phenomenon, FDMR measurements are more useful than measuring only dc MR or analysing the trends of magnetic field dependent change in the dielectric constant and tanδ. On the basis of the present case study, we propose that IS (FDMR) alone can be used as an effective experimental tool to detect and analyse the resistive and intrinsic parts contributing to the MD phenomenon.