Abstract
The purpose of this paper is to investigate the impact of repetitive short circuit events on the remaining useful lifetime of 1.0-kV/22-A SiC MOSFETs. Mixed accelerated power cycling tests, together with the different number of short-circuit repetitions, have been performed to provide a concrete estimation of short-circuit impact. The experimental results of short circuit waveforms show an increasing gate leakage current with the increasing number of repetitions. Due to the higher on-state voltage, induced by short circuit degradation, the devices withstand higher temperature swing during power cycling test compared to their initial condition, which accelerates the aging process and is related to the number of repetitive short circuits.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
