Abstract
The 7.5 MeV electron beam irradiation (EBI) effects on the Al/n-Si Schottky junction properties is studied in detail by analyzing I-V characteristics, power law characteristics, photoelectron spectra and energy band diagrams. The modifications in the junction parameters such as Schottky barrier height (ΦB), ideality factor (n), and series resistance (RS) at different irradiation doses are caused due to the formation of Al2O3-SiO2 dielectric medium in the interface of Al and n-Si. As a result, ΦB and band bending properties of the junction were modified. A linear correlation of ΦB with EBI dose, interface trap states (m) and effective work functions (EWFs) suggests that the EBI technique is particularly advantageous for the miniature of devices which use band lineup as a key parameter in the device processing.
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