Abstract
For part II see ibid., vol. 11, no. 10, pp. 1670-1680 (Oct. 1993). Several of the common approaches to smart pixel technology, including smart pixels based on optoelectronic integrated circuits and self-electrooptic effect devices (SEEDs), are studied. An optoelectronic NOR gate pixel consisting of an output laser diode, two input photodetectors, and a transistor circuit is analyzed for the purpose of investigating overall two-dimensional (2-D) interconnection and processing system performance. The major pixel performance issues are examined. The results show that the optoelectronic logic gate has the advantages of low noise (typically approximately -35 dBm), high bandwidth (>1 GHz), and low temperature sensitivity, while its power dissipation is about 5 mW, resulting in a moderate pixel packing density of 200/cm/sup 2/ for a total chip power dissipation of 1 W/cm/sup 2/.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
