Abstract
We report results from a symmetric cavity electroabsorption modulator (SCEM) in GaAs/AlGaAs. A reflection change of ∼ 45% with an insertion loss of 1.3 dB is obtained under 7.5 V in the normally-off mode. We discuss the factors that affect the device performance and compare the attainable performance with that of the normally-off asymmetric Fabry-Perot modulator (AFPM). We also propose a new method for an improvement of the restricted tolerances of SCEMs. Finally, we demonstrate bistable operation using two SCEMs in the symmetric self-electrooptic effect device (S-SEED) configuration, and attempt to evaluate the potential of this type of modulator for SEED applications.
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