Abstract
We have developed an ultrahigh vacuum technique for the implementation of complexnanosystems incorporating nonlithographic nanoparticles, ohmic contact metals andisolation dielectrics. The technique is compatible with the silicon integrated circuitmanufacturing process and is versatile, allowing the deposition of nanoparticles of anymetal, semiconductor or insulator with diameters as small as 2 nm with less than 5%size variation. In addition, the technique allows the creation of multi-layeredstructures of nanoparticles of different dimensions. The flexibility and the versatility ofthe technique have been demonstrated by depositing nanoparticles of variousmaterials as well as fabricating multi-layered structures incorporating nanoparticles.
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