Implementation of chemically amplified resist on mask technology below 0.6-μm feature using high-acceleration voltage e-beam system

Abstract

ABSTRACT We have investigated the perfomiances of positive Chemically Amplified Resist (CAR) withHigh Acceleration Voltage System on mask fabrication, widely. As we had expected, the resolutionand pattern fidelity both after development and after etching were improved dramatically, because ofits high contrast and good dry etching durability. As a result, practical resolution limitation was O.2pmand CD linearity for O.2.tm 1.O}.xm pattern range was O.034pm with Proximity Effect Correction(PEC). We obtained CD uniformity of3 l55nm, to 120X120mm2 area.Keywords : Chemically Amplified Resist (CAR), High Acceleration Voltage E-beam System,Resolution Limitation, Linearity, Uniformity, Proximity Effect Correction (PEC),Optical Proximity Correction (OPC) 1. INTRODUCTION Even though the PBS process extends its life by applying thin resist coating, it is quite difficult to define sub-micron pattern on mask because of low contrast and wet etching requirements. As dry etching resistance is not so excellent' and data sizing (over process) isindispensable, ZEP resist process is not enough to apply it to technology below O.6tm, also.The most promising candidate for sub-micron pattern is combination2 of 1) CAR process,which has already been developed and adopted in wafer process in spite of severe process